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v00.0603
MICROWAVE CORPORATION
HMC481MP86
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Features
P1dB Output Power: +19 dBm Gain: 20 dB Output IP3: +33 dBm Cascadable 50 Ohm I/Os Single Supply: +6V to +12V
8
AMPLIFIERS - SMT
Typical Applications
The HMC481MP86 is an ideal RF/IF gain block & LO or PA driver for: * Cellular / PCS / 3G * Fixed Wireless & WLAN * CATV, Cable Modem & DBS * Microwave Radio& Test Equipment
Functional Diagram
General Description
The HMC481MP86 is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering DC to 5 GHz. This Micro-P packaged amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +21 dBm output power. The HMC481MP86 offers 20 dB of gain with a +33 dBm output IP3 at 850 MHz while requiring only 74 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.
Electrical Specifications, Vs= 8.0 V, Rbias= 39 Ohm, TA = +25 C
Parameter DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5.0 GHz DC - 1.0 GHz 1.0 - 5.0 GHz DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 5.0 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz 0.5 - 2.0 GHz 2.0 - 3.0 GHz 3.0 - 4.0 GHz 4.0 - 5.0 GHz DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 5.0 GHz 16 15 14 12 9 Min. 18.5 15.5 12.5 10.5 9.0 Typ. 20.0 17.0 14.0 12.0 10.5 0.008 13 17 20 25 15 18 20 18 17 15 12 33 31 29 26 3.5 4.0 4.5 74 0.012 Max. Units dB dB dB dB dB dB/ C dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dBm dB dB dB mA
Gain
Gain Variation Over Temperature Input Return Loss
Output Return Loss Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0603
MICROWAVE CORPORATION
HMC481MP86
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Broadband Gain & Return Loss
25 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 -30 -35 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz)
S21 S11 S22
Gain vs. Temperature
24 22 20 18 16 GAIN (dB) 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 FREQUENCY (GHz)
+25 C +85 C -40 C
8
AMPLIFIERS - SMT
8 - 255
Input Return Loss vs. Temperature
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 1 2 3 4 5 6 FREQUENCY (GHz)
Output Return Loss vs. Temperature
0 -5 RETURN LOSS (dB)
+25 C +85 C -40 C
+25 C +85 C -40 C
-10 -15 -20 -25 -30 -35 0 1 2
3
4
5
6
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0 REVERSE ISOLATION (dB) -5 -10 -15 -20 -25 -30 0 1 2 3 4 5 6 FREQUENCY (GHz)
+25 C +85 C -40 C
Noise Figure vs. Temperature
10 9 8 NOISE FIGURE (dB) 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 FREQUENCY (GHz)
+25 C +85 C -40 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0603
MICROWAVE CORPORATION
HMC481MP86
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Psat vs. Temperature
24 22 20 18 Psat (dBm) 16 14 12 10 8 6 4 2 0
+25 C +85 C -40 C
8
AMPLIFIERS - SMT
P1dB vs. Temperature
24 22 20 18 P1dB (dBm) 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 FREQUENCY (GHz)
+25 C +85 C -40 C
0
1
2
3
4
5
FREQUENCY (GHz)
Output IP3 vs. Temperature
36 34 32 30 OIP3 (dBm) 28 26 24 22 20 18 16 0 1 2 3 4 5 FREQUENCY (GHz)
+25 C +85 C -40 C
Gain, Power & OIP3 vs. Supply Voltage for Constant Id= 74 mA @ 850 MHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm) 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 6 7 8 9 Vs (Vdc) 10 11
Gain P1dB Psat OIP3
12
Vcc vs. Icc Over Temperature for Fixed Vs= 8V, RBIAS= 39 Ohms
84 82 80 78 76 74 72 70 68 66 64 62 60 58 4.8
+85 C
+25 C
Icc (mA)
-40 C
4.9
5
5.1
5.2 Vcc (Vdc)
5.3
5.4
5.5
5.6
8 - 256
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
v00.0603
MICROWAVE CORPORATION
HMC481MP86
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) Collector Bias Current (Icc) RF Input Power (RFin)(Vcc = +5.15 Vdc) Junction Temperature Continuous Pdiss (T = 85 C) (derate 11.6 mW/C above 85 C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature +6.0 Vdc 100 mA
8
AMPLIFIERS - SMT
NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 7. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATABLE WITH THE "MICRO-X PACKAGE"
+17 dBm 150 C 0.753 W
86.3 C/W -65 to +150 C -40 to +85 C
Outline Drawing
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
8 - 257
MICROWAVE CORPORATION
v00.0603
HMC481MP86
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
8
AMPLIFIERS - SMT
Pin Descriptions
Pin Number Function Description Interface Schematic
1
RFIN
This pin is DC coupled. An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins must be connected to RF/DC ground.
Application Circuit
Note: 1. External blocking capacitors are required on RFIN and RFOUT. 2. RBIAS provides DC bias stability over temperature.
Recommended Bias Resistor Values for Icc= 74 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs) RBIAS VALUE RBIAS POWER RATING 6V 11 1/8 W 8V 39 1/4 W 10V 62 1/2 W 12V 91 1W
Recommended Component Values for Key Application Frequencies
Frequency (MHz) Component 50 L1 C1, C2 270 nH 0.01 F 900 56 nH 100 pF 1900 18 nH 100 pF 2200 18 nH 100 pF 2400 15 nH 100 pF 3500 8.2 nH 100 pF 5000 6.8 nH 100 pF
8 - 258
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v00.0603
HMC481MP86
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
Evaluation PCB
8
AMPLIFIERS - SMT
List of Materials
Item J1 - J2 J3 - J4 C1, C2 C3 C4 C5 R1 L1 U1 PCB* Description PC Mount SMA Connector DC Pin Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 F Capacitor, Tantalum Resistor, 1210 Pkg. Inductor, 0603 Pkg. HMC481MP86 107087 Evaluation PCB
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
* Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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